Abstract
SEL characterization of commercial SRAM memories has been carried out to select the best candidate for a latchup experiment in LEO space environment. A circuit for SEL detection and protection has been proposed and tested at CERN in the CHARM mixed-field facility.
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Secondo, R., Alia, R. G., Peronnard, P., Brugger, M., Masi, A., Danzeca, S., … Dusseau, L. (2017). Analysis of SEL on commercial SRAM memories for latchup detection and protection in LEO space applications. In Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS (Vol. 2016-September, pp. 1–5). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/RADECS.2016.8093189
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