Bottom-Up Growth of n-Type Polymer Monolayers for High-Performance Complementary Integrated Circuits

Abstract

Downscaling the semiconductor into ultrathin film is of vital importance to high-performance field–effect transistors (FETs), but the high-mobility FETs based on conjugated polymer monolayers have been rarely realized. Especially, the lack of high-performance n-type polymer monolayer FETs hinders the development of complementary integrated circuits. Herein, by fine-tuning the supramolecular assembly of two thiazole flanked naphthalene diimide-based conjugated polymers, the ≈2.5 nm-thick monolayers with well-defined fibrillar morphology are grown in a controllable way, where the one-dimensional solution-state structures are inherited. The resultant monolayer FETs show the electron mobility up to 0.25 cm2 V−1 s−1, among the record for n-type polymer monolayer FETs. More importantly, the first demonstration of polymer monolayer complementary integrated circuits is present, and a record-high inverter gain of 113 is achieved, which is also identical to the best polymer thin-film inverters.