Gamma irradiation effects on the charge carriers lifetimes in silicon

Abstract

The effect of high-dose gamma irradiation on the minority charge carrier lifetime in p-type and n-type single-crystal silicon wafers has been studied using the “Quasi-Static Technique,” Sinton WCT-120. Full computerized measurements are set-up on the lifetime of the minority charge carriers τ for many commercial wafers before/after exposure to gamma rays. It is concluded that there is a linear increase in the Charge Carrier Lifetime CCL till a certain dose, followed by an exponential decrease by increasing the dose at different gamma doses. However, it is suggested that under a certain dose of gamma radiation, the silicon wafers quality can be improved to be used in electronic devices. Graphical abstract: [Figure not available: see fulltext.]