The density of states in silicon nanostructures determined by space-charge-limited current measurements

Abstract

Space-charge-limited current (SCLC) flow was investigated as a function of applied potential and specimen thickness in nanocrystalline silicon films prepared by electrochemical anodization. From the analysts of the current-voltage (J-V) characteristics in the SCLC regime, the density of states distribution near the Fermi level was determined. The agreement between the experimental J-V characteristics and the theoretical curve strongly implies that the current flow is entirely controlled by localized states situated at the quasi-Fermi level. © 1998 American Institute of Physics.