Memristive behaviour of spin coated titania thin film

Abstract

This paper presents the memristive behaviour of spin coated titania thin films. The precursor molarity of titania thin film was varied from 0.05 to 0.4 M to study the effect of precursor molarity on the memristive behaviour of the thin films. From the observation, although the film thickness increased with the precursor molarity, the resistance ratios of the best switching loop for all samples showed no significant differences. However, it was found that the sample with less precursor molarity (device that having thinner film) required lesser time to produce the stable switching loop compared to the sample with higher precursor molarity (device that having thicker film).