Analytical nuclear gradients for electron-attached and electron-detached states for the second-order algebraic diagrammatic construction scheme combined with frozen-density embedding

Abstract

In the present work, we report the derivation and implementation of vertical ionization potentials (IPs) and electron affinities (EAs) for embedded wavefunction methods as well as the corresponding analytical nuclear gradients. Vertical transitions have been implemented for CIS(D∞), the second-order algebraic diagrammatic construction [ADC(2)] scheme, and the second-order approximate coupled-cluster singles and doubles method. For all methods, density fitting is applied to facilitate reduced memory and disk storage requirements. Analytical nuclear gradients have been derived and implemented for CIS(D∞) and ADC(2) both with and without frozen-density embedding (FDE). The objective of the reported method is to study the properties of organic semiconductors in which charge is transported along molecular stacks in molecular crystals. The accuracy of the implemented methods is, therefore, assessed using stacked dimers of small model systems. Albeit second-order methods can yield noticeable errors with respect to reference methods in terms of absolute IP and EA values, they show a significantly improved accuracy for the shift of the IP and EA values at different intermolecular distances relative to the monomers. Besides reducing the computational costs, the FDE ansatz introduces furthermore a significant conceptual difference as it enables control over which subsystem is ionized, allowing for the calculation of transfer integrals for the interacting (embedded) systems. The new implementation is finally applied to tetraazaperopyrenes, used as organic semiconductors, to study charge-localization and long-range polarization in particular.