Effect of quantum barrier width and quantum resonant tunneling through InGaN/GaN parabolic quantum well-LED structure on LED efficiency

Abstract

The effect of quantum barrier width and electric field on the resonant tunneling through the double barrier In0.2Ga0.8N/GaN parabolic-quantum well light-emitting diode (LED) structure and LED efficiency was investigated analytically. LEDs are based on resonant tunneling diode (RTD) quantum well (QW) structures, which exhibit the characteristic property of negative differential resistance (NDR) that is crucial for LED operation. The predictions of the current density–voltage (J–V) characteristics of the RTDs made analytically in this study are in good agreement with previous experimental data. Moreover, the parabolic quantum well-LED with thicker quantum barriers (from 1nm to 12 nm) exhibits a smaller efficiency droop (from 5.2 to 11%), and the NDR increases significantly from 0.023 to 1 Ω leading to low power dissipation.