Multicolor light-emitting devices with Tb 2 O 3 on silicon

Abstract

Great efforts have been devoted to achieving efficient Si-based light-emitting devices. Here we report new light-emitting devices fabricated with Tb 2 O 3 on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the characteristic transitions of Tb 3+ ions in Tb 2 O 3. The electroluminescence mechanisms of the Tb 2 O 3 light-emitting devices are discussed. In addition, visible and near infrared electroluminescence was observed in rare-earth (Eu 3+, Sm 3+ and Yb 3+) doped Tb 2 O 3 light-emitting devices.