Crystal tilting in GaN grown by pendoepitaxy method on sapphire substrate

Abstract

Pendeoepitaxy of GaN on sapphire substrate with SiO2 mask is demonstrated and characterized by transmission electron microscopy and double crystal x-ray diffraction. A continuous layer of GaN with low dislocation density was achieved by this method. Parts of the GaN layer are tilted symmetrically toward [11-20] direction and have two kinds of coalesce and tilt boundaries. Each boundary was formed by a vertical array of piled up dislocations with the Burger's vector of [11-20]. The tilting mechanism in pendeo-epitaxy is discussed in terms of surface interaction between the SiO2 mask and ELO-GaN. © 1999 American Institute of Physics.