Tunable electron and hole doping in FeCl 3 intercalated graphene

Abstract

We have studied the electronic characteristics of FeCl 3 intercalated bilayer graphene under a perpendicularly applied electric bias. Evolution of the electronic structure of FeCl 3 intercalated bilayer graphene as a function of the applied electric bias is performed using first-principles density-functional theory including interlayer van der Waals interactions. The calculation results demonstrate that the hole-doped graphene layers associated with the high electronegativity of FeCl 3 transform into electron-doped layers tuned by the applied bias. The implications of controllable electronic structure of intercalated graphene for future device applications are discussed. © 2012 American Institute of Physics.