Silver oxide Schottky contacts on n-type ZnO

Abstract

A method of fabricating highly rectifying Schottky contacts on n -type ZnO using silver oxide has been developed and used to compare diode performance on hydrothermal and melt grown, bulk, single crystals. Silver oxide diodes on hydrothermal ZnO have lower ideality factors, lower reverse current voltage dependence, higher series resistance, and larger surface-polarity related differences in barrier height, compared to those on melt ZnO. These effects are explained by the large difference in resistivity between hydrothermal and melt ZnO. Barrier heights of 1.20 eV were achieved on the Zn-polar face of hydrothermal ZnO which are the highest reported for n -type ZnO. © 2007 American Institute of Physics.