Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser

Abstract

Heterostructure ReS2/GaAs was fabricated on a 110-μm (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO4 laser was demonstrated by employing heterostructure ReS2/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3 ns with a repetition rate of 452 kHz was obtained, corresponding to the pulse energy of 465 nJ and the peak power of 9.1 W. In comparison with the ReS2 Q-switched laser and the GaAs Q-switched laser, the heterostructer ReS2/GaAs Q-switched laser can generate shorter pulse duration and higher pulse energy.