Epitaxial growth of a silicene sheet

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Abstract

Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphenelike structure) epitaxially grown on a close-packed silver surface [Ag(111)]. This has been achieved via direct condensation of a silicon atomic flux onto the single-crystal substrate in ultrahigh vacuum conditions. A highly ordered silicon structure, arranged within a honeycomb lattice, is synthesized and present two silicon sublattices occupying positions at different heights (0.02 nm) indicating possible sp 2 -sp3 hybridizations. © 2010 American Institute of Physics.

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Lalmi, B., Oughaddou, H., Enriquez, H., Kara, A., Vizzini, Ś., Ealet, B., & Aufray, B. (2010). Epitaxial growth of a silicene sheet. Applied Physics Letters, 97(22). https://doi.org/10.1063/1.3524215

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