Baseline 1300 nm dilute nitride VCSELs

Abstract

Dilute nitride (DN) vertical cavity surface emitting lasers (VCSELs) emitting near 1300 nm exhibit state-of-the-art performance including bandwidths of 10 GHz and a record high error-free data transmission of 12 Gbps. Renewed interest in DN VCSELs stems from emerging applications in kilometer-reach digital communication across optical fiber and across free space via eye safe beams, time-of-flight and structured light sensing, and photonic-electronic integrated circuit optical interconnects. We produce VCSEL wafers in a production molecular beam epitaxy system on 3- and 4-inch diameter GaAs wafers. We report record dynamic performance for our test VCSELs with oxide aperture diameters ranging from 2 to 12 µm.