Electronic structure of EuO spin filter tunnel contacts directly on silicon

Abstract

We present an electronic structure study of a magnetic oxide/ semiconductor model system, EuO on silicon, which is dedicated for efficient spin injection and spin detection in silicon-based spintronics devices. A combined electronic structure analysis of Eu core levels and valence bands using hard X-ray photoemission spectroscopy was performed to quantify the nearly ideal stoichiometry of EuO "spin filter" tunnel barriers directly on silicon, and the absence of silicon oxide at the EuO/Si interface. These results provide evidence for the successful integration of a magnetic oxide tunnel barrier with silicon, paving the way for the future integration of magnetic oxides into functional spintronics devices. Hard X-ray photoemission spectroscopy of an Al/EuO/Si heterostructure probing the buried EuO and EuO/Si interface. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) Hard X-ray photoemission spectroscopy reveals the nearly ideal stoichiometry of EuO spin filter tunnel barriers grown directly on silicon, and the absence of silicon oxide formation at the EuO/Si interface. These results demonstrate the successful integration of a magnetic oxide tunnel barrier with silicon, paving the way for the future integration of magnetic oxides into functional spintronics devices. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.