Resistivity of Fe/Al Multilayered Thin Films from Low Temperature to Room Temperature

Abstract

By using electron beam gun and thermal deposition techniques in the vacuum range 6 x10-5mbar. The pure materials of 99.99% purity of iron and aluminium multilayers films grown on glass substrates at 300K in the following viz. The resistance was measured using four probe method at UGC-DAE Consortium Indore (4.2K to 300K) later resistivity, conductivity, temperature co-efficient of resistance (TCR), residual resistivity ratio (RRR) , and activation energy(Ea) were calculated. The resistivity behavior shown that the resistivity is increased with increasing the n value, resistivity is increased with increasing temperature. The data belonging to metallic region has been analyzed using the conventional power law’s and it is first time this set of films have explore resistivity at low temperature.