Abstract
The results of studies of electrical and gas-sensitive characteristics of thin films Ga2O3:Si on exposure to oxygen in the range from 0 to 100 vol. % and operating temperatures from 25 to 700 °C were presented. Samples were obtained by HF magnetron sputtering. The possibility of developing low-temperature oxygen sensors was shown. A model of oxygen interaction with Ga2O3:Si films was proposed. The mechanism of Si influence on gas-sensitive properties of thin films of gallium oxide was proposed.
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CITATION STYLE
Almaev, A. V., Chernikov, E. V., Kushnarev, B. O., & Yakovlev, N. N. (2019). Effect of oxygen on the properties of Ga2O3:Si thin films. In Journal of Physics: Conference Series (Vol. 1410). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/1410/1/012201
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