Ni ohmic contacts to n-type Ge1- x - YSixSny using phosphorous implant and segregation

Abstract

N-type Ge1-x-ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- Ge1-x-ySixSny with and without phosphorous implantation was performed. Ohmic contacts to n-type Ge1-x-ySixSny are realized by shallow P implant and Ni(Ge1-x-ySixSny) formation after rapid thermal annealing at 400 °C. It is proposed that the ohmic behavior is mainly attributed to the phosphorous segregation effect confirmed by secondary ion mass spectroscopy.