In situ arsenic-doped Si1-y Cy selective epitaxial growth under atmospheric pressure

Abstract

We investigated the characteristics of in situ As-doped Si1-y Cy selective epitaxial growth (SEG) under atmospheric pressure. We succeeded in obtaining an in situ doped Si1-y Cy SEG film with a high As concentration of 2.6× 1019 atoms cm3. The film exhibited a high crystalline quality, high strain, constant As and C concentration profiles, and an abrupt change in the dopant profile at the interface. It was found that the increase in As concentration under atmospheric pressure increases the C concentration and the growth rate by competitive surface segregation between As and C atoms, leading to a highly strained Si1-y Cy SEG film with a low resistivity. © 2008 American Institute of Physics.