A SPICE model for gate turn-off thyristors

Abstract

The authors present a SPICE gate turn-off thyristor (GTO) model which simulates both the static negative differential resistance characteristics and the dynamic switching characteristics. The model consists of a parallel connection of two-transistor, three-resistor (2T-3R) cells. The accuracy of the model depends on the number of 2T-3R cells used. This multi-cell GTO model enables one to simulate the s-type negative differential resistance (NDR) I-V characteristics and the switching characteristics of the GTO with a high degree of accuracy. The experimental validation test shows that two parallel 2T-3R cells simulate the switching characteristics of the GTO accurately. A sensitivity study of the SPICE model performance with respect to the model parameters is used to develop the model synthesis procedure.