Graphene Doping: A Review

Abstract

Graphene, a new material for the electron-device community, has many extraordinary properties. Especially, it provides a perfect platform to explore the unique electronic property in absolutely two-dimensions. However, most electronic applications are handicapped by the absence of a semiconducting gap in pristine graphene. To control the semiconducting properties of graphene, doping is regarded as one of the most feasible methods. Herein, a brief review is given on the recent research progress of graphene doping, which is roughly divided into three categories: First, the hetero atom doping, including arc discharge, chemical vapor deposition, electrothermal reaction and ion-irradiation approaches; Second, the chemical modification strategy; Third, the method of electrostatic field tuning. In addition, the various potential applications of the above doping methods are also introduced.