Variable RF capacitor based on a-Si:H (P-doped) multi-length cantilevers

Abstract

A variable RF capacitor with a-Si:H (doped with phosphine) cantilevers as the top electrode were designed and fabricated. Because the top multi-cantilever electrodes have different lengths, increasing the applied voltage pulled down the cantilever beams sequentially, thus realizing a gradual increase of the capacitance with the applied voltage. A high-k material, HfO 2, was used as an insulating layer to increase the tuning range of the capacitance. The measured capacitance from the fabricated capacitor was much lower and the pull-in voltage was much higher than those from theoretical analysis because of incomplete contact of the two electrodes, existence of film differential stresses and charge injection effect. Increase of sweeping voltage rate could significantly shift the pull-in voltage to higher values due to the charge injection mechanisms. © 2006 IOP Publishing Ltd.