Abstract
A novel gate driver circuit composed of four thin-film transistors (TFTs) and two capacitors is developed. Three-phase overlapping clock signals are used in multifunction input TFT and driving TFT, so the proposed circuit can have a simple structure. The electrical characteristics of a fabricated amorphous-indium-gallium-zinc-oxide TFT are measured to establish the model of HSPICE simulation. Simulated results confirm that the proposed gate driver circuit generates stable gate pulses according to the specification of a 5.46-in full high-definition panel and the single-stage layout area is 400 μ {\rm m\times 126~\mu m. These specifications are favorable for high-resolution and narrow-bezel active-matrix liquid crystal displays.
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Lin, C. L., Chen, F. H., Ciou, W. C., Du, Y. W., Wu, C. E., & Lee, C. E. (2015). Simplified Gate Driver Circuit for High-Resolution and Narrow-Bezel Thin-Film Transistor Liquid Crystal Display Applications. IEEE Electron Device Letters, 36(8), 808–810. https://doi.org/10.1109/LED.2015.2450231
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