Ion implantation damage and annealing in germanium

Abstract

We have observed a unique damage structure, which forms within the amorphous phase, in ion-implanted Ge above a certain ion dose. This structure, which represents a drastic alteration of the near-surface morphology, is responsible for the adsorption of large quantities of C and O onto the surface of the implanted area. Results are presented of a systematic study of this effect and possible mechanisms for its information are discussed. Ion implantation conditions desirable for device applications are established and deleterious effects due to the presence of this damage upon both solid- and liquid-phase epitaxial growth of the implanted layers are discussed.