Depletion Mode Modulation Doped Al0.48 ln0.52 As-Ga0.47 In0.53 As Heterojunction Field Effect Transistors

Abstract

We report the first demonstration of a depletion mode modulation doped Ga0.47 In0.53 As field effect transistor. This transistor combines the advantage of modulation doping and the superior material characteristics of Ga0.47 In0.53 As. DC transconductances of 31 mmho/ mm at 300 K and 69 mmho/mm at 77 K have been measured for a device with 5.2 μm gate length and 340 μm gate width. An enhanced drift mobility is responsible for 88 percent of the improvement in the transconductance at 77 K and the remaining 12 percent is attributed to an improved ohmic contact. A high performance modulation doped Ga0.47 In0.53 As FET is expected to play an important role in very high speed digital and analog applications. Copyright © 1982 by The Institute of Electrical and Electronics Engineers, Inc.