Compositional dependence of epitaxial Ti n+1 SiC n MAX-phase thin films grown from a Ti 3 SiC 2 compound target

  • Magnuson M
  • Tengdelius L
  • Greczynski G
  • et al.
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Abstract

The authors investigate sputtering of a Ti3SiC2 compd. target at temps. ranging from RT (no applied external heating) to 970 °C as well as the influence of the sputtering power at 850 °C for the deposition of Ti3SiC2 films on Al2O3(0001) substrates. Elemental compn. obtained from time-of-flight energy elastic recoil detection anal. shows an excess of carbon in all films, which is explained by differences in the angular distribution between C, Si, and Ti, where C scatters the least during sputtering. The oxygen content is 2.6 at. % in the film deposited at RT and decreases with increasing deposition temp., showing that higher temps. favor high purity films. Chem. bonding anal. by XPS shows C-Ti and Si-C bonding in the Ti3SiC2 films and Si-Si bonding in the Ti3SiC2 compd. target. X-ray diffraction reveals that the phases Ti3SiC2, Ti4SiC3, and Ti7Si2C5 can be deposited from a Ti3SiC2 compd. target at substrate temps. above 850 °C and with the growth of TiC and the Nowotny phase Ti5Si3Cx at lower temps. High-resoln. scanning transmission electron microscopy shows epitaxial growth of Ti3SiC2, Ti4SiC3, and Ti7Si2C5 on TiC at 970 °C. Four-point probe resistivity measurements give values in the range ∼120 to ∼450 μΩ cm and with the lowest values obtained for films contg. Ti3SiC2, Ti4SiC3, and Ti7Si2C5. (c) 2019 American Institute of Physics. [on SciFinder(R)]

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Magnuson, M., Tengdelius, L., Greczynski, G., Eriksson, F., Jensen, J., Lu, J., … Högberg, H. (2019). Compositional dependence of epitaxial Ti n+1 SiC n MAX-phase thin films grown from a Ti 3 SiC 2 compound target . Journal of Vacuum Science & Technology A, 37(2), 021506. https://doi.org/10.1116/1.5065468

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