Study the Effect of CO2 Laser Annealing on Silicon Nanostructures

Abstract

The recent discovery of strong room-temperature photoluminescence from silicon nanocrystals fabricated by different methods is an extremely important scientific breakthrough with enormous technological implications because of possibility of integration of silicon based electronic and optoelectronic devices. This paper the effect of Laser annealing technique used to produce nanoparticales by CW laser was proposed. The laser spot was focused within 0.6 mm beam radius to synthesize silicon rich oxide SiO x nanostructures in silicon nanostructures thin films by laser ablation of silicon target on glass. The CO 2 laser beam λ (10.6µm) with power Plaser ranging from 1 to 10 Watt. Two lasers were employed; the first, Q-switched Nd:YAG laser to prepare an amorphous silicon film on glass substrate and the second, CW CO 2 laser beam to produce local heating and synthesize a silicon oxide nanostructures. A sufficient absorbing CO 2 laser beam was used to induce local heating at optimizing surface temperature. The optical and surface morphological properties of SiO x films annealed by CO 2 laser are primarily investigated the effect of parameters such as power density and elimination time.