Contribution of series resistance in modelling of high-temperature type II superlattice p-i-n photodiodes

Abstract

We analyze some of the consequences of omitting series resistance in InAs/GaSb p-i-n T2SL photodiode dark current modelling, using simplified p-n junction model. Our considerations are limited to generation-recombination and diffusion-effective carrier lifetimes to show the possible scale of over- or underestimating photodiodes parameters in high-temperature region. As is shown, incorrect series resistance value might cause discrepancies in τ gr and τ diff 's estimations over one order of magnitude. © 2012 Jarosław Wróbel et al.