Abstract
Methods are presented for using two-dimensional (axially symmetric) aperture lenses of both the single- and multiaperture (fly‘s-eye) kind and one-dimensional (planar-symmetric) aperture lenses in image-projection systems for electron lithography. The basic electron-optical properties of such aperture lenses are derived. The ancillary film technology is discussed, including pre exposure and postexposure resist processes in use and the techniques developed for fabricating electron-transmission object masks that can withstand the requisite electron bombardment during image projection. The image-projection systems developed for use in fabricating arrays of thin-film field emitters, electron-beam-ad-. Copyright © 1975 by the Institute of Electrical and Electronics Engineers, Inc.
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CITATION STYLE
Heynick, L. N., Westerberg, E. R., Hartelius, C. C., & Lee, R. E. (1975). Projection Electron Lithography Using Aperture Lenses. IEEE Transactions on Electron Devices, 22(7), 399–409. https://doi.org/10.1109/T-ED.1975.18151
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