Microstructure analysis of advanced ceramics by high-resolution analytical transmission electron microscopy

Abstract

The present paper reviews microstructure analysis of advanced ceramics by means of high-resolution analytical transmission electron microscopy, which have been carried out for more than ten years by the present author. The paper summarizes mainly four research topics of the materials characterization. The first example is to describe the accelerating voltage dependence of the analytical capabilities in terms of the P/B ratios in the EDS and EELS spectra. It is shown that the P/B ratios increase with increasing voltage from 100 to 400 kV. The second is the structure and composition analysis of aluminum nitride polytypes by the combined use of structure imaging, CBED, EDS and EELS techniques. The third is to show results of ultra-high spatial resolution analysis of a modulated structure of InFeO3(ZnO)13, using an 0.5-nm probe in a new 300 kV field emission electron microscope. The last example is the electron beam radiation damage and the mass loss of inorganic materials. It is shown that the amorphization damage rate depends on the presence of water within the crystal lattice. © 1995 Oxford University Press.