Low power non-volatile memory switching in monolayer-rich 2D WS2 and MoS2 devices

Abstract

Memristors characterized by non-volatile memory resistance switching are promising candidates for building brain inspired computing architectures. However, existing memristive devices are still far from the energy efficiency of petaflops per joule exhibited by biological neural networks. Therefore, to achieve the goal of ultra-low power operation, it is necessary to develop new materials for the active layer in memristors. Here, we show highly energy efficient memristive devices built from liquid-exfoliated 2D WS2 and MoS2 nanosheets, enriched in monolayers using a cascade centrifugation method. Lateral devices with electrochemically inert electrodes were built using the drop casting method. The devices show non-volatile resistive switching with a remarkable low energy consumption. This work contributes to the realization of energy efficient and high performance neuromorphic computing applications.