Physical and electrical characteristics of carbon nanotube network field-effect transistors synthesized by alcohol catalytic chemical vapor deposition

Abstract

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5-7nm in diameter and low disorder-induced mode (D -band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2 as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage (I d - V d), drain current versus gate voltage (I d - V g), mobility, subthreshold slope (SS), and transconductance (G m), were obtained. © 2011 Chin-Lung Cheng et al.