Analytical model for threshold voltage in UTBB SOI MOSFET in dynamic threshold voltage operation

Abstract

This paper presents an analytical model to determine the threshold voltage in Ultrathin Body and Buried Oxide Fully Depleted Silicon on Insulator (UTBB FD SOI) MOSFETs operating in dynamic threshold (DT) voltage modes. The analytical model is based on implementing the quantum confinement effect and the DT restriction. The results show that the proposed analytical model in its simplicity provides a good agreement to the experimental data.