A recent technological trend in semiconductor industries is the use of a large silicon wafer to improve the productivity and reduce the cost of silicon devices. The ID-blade traditionally being used for slicing a silicon ingot, deteriorates the through-put when being applied to a large size ingot. The wire saw slicing technology, therefore, has attracted attention and is now replacing the ID-blade slicing technology. The wire sawing with loose abrasives is widely employed today, but the process has problems of dirty environment and inefficiency. To overcome these problems, fixed-abrasive wire saw processes have been introduced, namely an electrodeposited diamond wire and a resinoid diamond wire. These fixed-abrasive wires, however, still have several problems when being applied to a practical use. We have developed the resinoid diamond wire containing metal powder to settle the problems. A series of experiments revealed that a newly developed wire has a good mechanical/ thermal property and a good machining characteristic. © 1999, The Japan Society of Mechanical Engineers. All rights reserved.
CITATION STYLE
Enomoto, T., Shimazaki, Y., Tani, Y., Suzuki, M., & Kanda, Y. (1999). Development of a Resinoid Diamond Wire Containing Metal Powder for Slicing a Silicon Ingot. Nihon Kikai Gakkai Ronbunshu, C Hen/Transactions of the Japan Society of Mechanical Engineers, Part C, 65(631), 1235–1240. https://doi.org/10.1299/kikaic.65.1235
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