Enhanced crystal quality of AlxIn1-xAsySb1-y for terahertz quantum cascade lasers

7Citations
Citations of this article
15Readers
Mendeley users who have this article in their library.

Abstract

This work provides a detailed study on the growth of AlxIn1-xAsySb1-y lattice-matched to InAs by Molecular Beam Epitaxy. In order to find the conditions which lead to high crystal quality deep within the miscibility gap, AlxIn1-xAsySb1-y with x = 0.462 was grown at different growth temperatures as well as As2 and Sb2 beam equivalent pressures. The crystal quality of the grown layers was examined by high-resolution X-ray diffraction and atomic force microscopy. It was found that the incorporation of Sb into Al0.462In0.538AsySb1-y is strongly temperature-dependent and reduced growth temperatures are necessary in order to achieve significant Sb mole fractions in the grown layers. At 480 °C lattice matching to InAs could not be achieved. At 410 °C lattice matching was possible and high quality films of Al0.462In0.538AsySb1-y were obtained.

Author supplied keywords

Cite

CITATION STYLE

APA

Zederbauer, T., Andrews, A. M., MacFarland, D., Detz, H., Schrenk, W., & Strasser, G. (2016). Enhanced crystal quality of AlxIn1-xAsySb1-y for terahertz quantum cascade lasers. Photonics, 3(2). https://doi.org/10.3390/photonics3020020

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free