Electronic effects on the melting of small gallium clusters

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Abstract

Motivated by experimental reports of higher-than-bulk melting temperatures in small gallium clusters, we perform first-principles molecular dynamics simulations of Ga 20 and Ga 20+ using parallel tempering in the microcanonical ensemble. The respective specific heat (C V) curves, obtained using the multiple histogram method, exhibit a broad peak centered at approximately 740 and 610 K-well above the melting temperature of bulk gallium (303 K) and in reasonable agreement with experimental data for Ga 20+. Assessment of atomic mobility confirms the transition from solid-like to liquid-like states near the C V peak temperature. Parallel tempering molecular dynamics simulations yield low-energy isomers that are ∼0.1 eV lower in energy than previously reported ground state structures, indicative of an energy landscape with multiple, competing low-energy morphologies. Electronic structure analysis shows no evidence of covalent bonding, yet both the neutral and charged clusters exhibit greater-than-bulk melting temperatures. © 2012 American Institute of Physics.

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Steenbergen, K. G., Schebarchov, D., & Gaston, N. (2012). Electronic effects on the melting of small gallium clusters. Journal of Chemical Physics, 137(14). https://doi.org/10.1063/1.4757420

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