Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory

Abstract

In this study, the effect of the oxygen profile and thickness of multiple-layers TiOx on tunnel barrier characteristics was investigated to achieve high non-linearity in low-resistance state current (ILRS). To form the tunnel barrier in multiple-layer of TiO x, tunnel barrier engineering in terms of the thickness and oxygen profile was attempted using deposition and thermal oxidation times. It modified the defect distribution of the tunnel barrier for effective suppression of ILRS at off-state (1/2VRead). By inserting modified tunnel barrier in resistive random access memory, a high non-linear ILRS was exhibited with a significantly lowered ILRS for 1/2V Read. © 2014 AIP Publishing LLC.