Growth of β-Ga2O3 nanorods and photoluminescence properties

Abstract

β-Ga2O3 nanorods were successfully fabricated through annealing Ga2O3/Mo films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. The morphology and structure of the as-synthesized nanorods were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-rays spectroscopy. The results show that the formed nanorods are single-crystalline Ga2O3 with monoclinic structure. The diameters of nanorods are 200 nm and lengths typically up to several micrometers. A photoluminescence spectrum at room temperature under excitation at 325 nm exhibits two strong blue-light peaks located at about 413.0 nm and 437.5 nm, attributed to the recombination of bound electron-hole exciten in β-Ga2O3 single crystal. The growth process of the β-Ga2O3 nanorods is probably dominated by conventional vapor-solid mechanism.