High-field magnetoresistance in p-(In,Mn)As/n-InAs heterojunctions

Abstract

The high-field magnetoresistive properties of a p- In0.96 Mn0.04 Asn-InAs junction have been measured. The heterojunction was formed by epitaxially depositing an InMnAs thin film on an InAs substrate using metalorganic vapor phase epitaxy. Under forward bias, a large nonsaturating magnetoresistance is observed at temperatures from 25 to 295 K in fields up to 9 T. At room temperature, the magnetoresistance increases linearly with magnetic field from 1.5 to 9 T and is greater than 700% at 9 T. The magnetoresistance can be simulated using a modified diode equation, including a field-dependent series magnetoresistance. © 2006 American Institute of Physics.