Pressure effects on magnetic and transport properties in CoFe-based spin valve

Abstract

We have studied the magnetoresistance of an enhanced-biased spin valve device under high pressure. The magnetoresistance decreases by 0.0014 up to 2 GPa with increasing pressure, which is inferred to be due to slight deviation from an antiparallel-spin configuration of the free and pinned layers. In the pressure range between 2 and 2.75 GPa, the exchange bias field generated in the pinned layer decreases and the coercivity of the free layers clearly increases by 35 Oe, which is likely to be related to less hydrostatic pressure.