Theoretical analysis of CMOS circuits in 90 nm technology

Abstract

In this paper a novel design of 1-bit CMOS full adder cell using XNOR gate and Multiplexer, This paper CMOS not gate and full adder calculate the theoretical value of dynamic power, leakage power, load capacitance, percentage error and switching activity., The results show that the proposed technique in terms of power consumption, delay are used in 90 nm technology.