Laser-Induced Damage Threshold of Barium Chalcogenides Crystals at 2091 nm

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Abstract

This paper is devoted to a determination of the 0% probability laser-induced damage threshold of the BaGa4Se7 and BaGa2GeSe6 nonlinear elements by the R-on-1 procedure. A Ho:YAG laser radiation at 2091 nm with pulse duration 13-17 ns and varied pulse repetition rate, 2 kHz, 5 kHz and 10 kHz, was used for testing.

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Kostyukova, N. Y., Boyko, A. A., Eranov, I. D., Kolker, D. B., Antipov, O. L., Erushin, E. Y., … Badikov, V. V. (2020). Laser-Induced Damage Threshold of Barium Chalcogenides Crystals at 2091 nm. In Proceedings - International Conference Laser Optics 2020, ICLO 2020. Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/ICLO48556.2020.9285495

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