Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator

Abstract

We present a theoretical model for mobile ion contamination in a silicon microelectromechanical resonator. In the model both drift and diffusion of the mobile charge in dielectric films are taken into account. The model is verified through a comparison to existing experimental data. We show that the model can describe the frequency drift of resonators in a wide temperature range. © 2011 American Institute of Physics.