Influence of TBAs flow in MOCVD growth on nitrogen incorporation in GaAsN alloy and its optical quality detected by photoreflectance

Abstract

In this work there has been studied GaNAs bulk layers grown by metal organic chemical vapour deposition (MOCVD) with different tributylarsine (TBAs) flow and the same flow of triethylgallium (TEGa) and unsymmetrical dimethyl-hydrazine (DMHy). High resolution X-ray diffraction (HR-XRD) and room temperature photoreflectance (PR) have been carried out in order to evaluate the nitrogen content and bandgap energy and quality of the GaAsN layer. It has been observed that the TBAs flow influences of the nitrogen incorporation. The variation of the TBAs from 37 to 1182 μmol/min causes variation of nitrogen content in GaAsN layer in the range of 1.5-4%. The best optical quality of GaAsN layer and the highest nitrogen incorporation have been found for the TBAs flow in the range of 296 and 591 μmol/min. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.