Abstract
A self-rectifying twin-bit RRAM in a novel 3D interweaved cross-point array has been proposed and demonstrated in 28nm CMOS BEOL process. With TaOx RRAMs on both sides of a single Via, the twin-bit RRAM cell is composed by Cu back-end layers only. Excellent selectivity by its asymmetric IV characteristic enables the twin-bit 1R cells to be efficiently stacked in 3D cross-point arrays.
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Chin, Y. W., Chen, S. E., Hsieh, M. C., Chang, T. S., Lin, C. J., & King, Y. C. (2014). Point twin-bit RRAM in 3D interweaved cross-point array by Cu BEOL process. In Technical Digest - International Electron Devices Meeting, IEDM (Vol. 2015-February, pp. 6.4.1-6.4.4). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/IEDM.2014.7046996
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