Using a multi-layer stacked AlGaN/GaN structure to improve the current spreading performance of ultraviolet light-emitting diodes

Abstract

To obtain excellent current spreading performance of ultraviolet light-emitting diodes (UVLEDs), a 60-period stacked Si modulation-doped n-AlGaN/u-GaN structure is proposed to replace the traditional n-AlGaN structure. The high-resolution X-ray diffraction ω-scan rocking curves show that the periodic growth of AlGaN and GaN layers plays a positive role in reducing dislocation density. Compared with the conventional UV light-emitting diodes (LEDs), light emission micrographs of devices with a multi-layer stacked n-AlGaN/u-GaN structure reveal higher brightness and a more uniform distribution. In addition, the output power and external quantum efficiency under a 20-mA injection current are increased by 22% and 26.5%, respectively. Experimental and simulation results indicate that a multi-layer stacking structure can alleviate the current crowding effect in four ways: (1) a reduction in dislocation density; (2) replacement of quasi-two-dimensional electron transport with electronic bulk transport to enhance electron mobility; (3) an increase in electron concentration without improving the impurity concentration; and (4) a weakening of the electron scattering effect by reducing the impurity concentration.