Thermal residual stress modeling in ain and gan multi layer samples

Abstract

Thermal residual stresses can detrimentally affect the electronic and optical properties of epitaxial films thereby shortening device lifetime. Based on our earlier work on thermal expansion of nitrides, we provide a finite element modeling analysis of the residual stress distribution of multilayered GaN and AIN on 6H-S1C. The effects of thickness and growth temperatures are considered in the analysis. © 1999 Materials Research Society.