Lithographic performance of extreme ultravolet full-field exposure tool at selete

Abstract

The Selete full-field etreme ultraviolet (EUV) exposure tool, the EUV1, was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in exposure experiments with a static slit using line and space (L& S) patterns, Selete Standard Resist 03 (SSR3), a numerical aperture (NA) of 0.25, and conventional illumination (ω = 0.8). The results showed that 25 nm L&S patterns were resolved. Dynamic exposure experiments showed the resolution to be 45 nm across the exposure field and the critical dimension (CD) uniformity across a shot to be 7 nm, which is sufficient for an alpha-level lithography tool. © 2009 The Japan Society of Applied Physics.