Abstract
Electrically manipulating the magnetization of insulators presents exciting opportunities for fast and energy-efficient spintronic devices. However, the existing approaches, which rely on spin-orbit torque (SOT), invariably require an auxiliary field. Here field-free current-induced magnetization switching in perpendicularly magnetized Tm3Fe5O12 films is demonstrated. This is achieved through a magnetic hybrid structure, Tm3Fe5O12/Co40Fe40B20/Cu/SiO2, where the Cu layer acts as the source of orbital current, and the in-plane magnetized Co40Fe40B20 layer functions as the converter of orbital-to-spin current. The interplay between the insulating and metallic magnetic layers not only yields a significant anomalous Hall signal for monitoring the Tm3Fe5O12 magnetization states, but also enables field-free switching that is immune to the magnetic history of the structure. It also observes similar Tm3Fe5O12 switching in stacks with different spin/orbital current sources, with the SOT-driven switching consuming substantially more power. This work establishes a pathway for achieving energetically efficient all-electrical manipulation of insulator spins through orbital currents.
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CITATION STYLE
Bi, L. Z., Ke, J., Bai, H., Li, G., Zhu, Z., Hu, C., … Cai, J. W. (2024). Field-Free and Energy-Efficient Switching of a Ferrimagnetic Insulator Through Orbital Currents of Copper. Advanced Electronic Materials, 10(2). https://doi.org/10.1002/aelm.202300627
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