Optical & current-voltage characteristics of dip coated TiO2 thin film

Abstract

Ti O2 thin films have been synthesized by dip coating process on the p-type silicon wafer for different withdrawal speeds varied from 1 cm/min to 4 cm/min. The films were annealed at 500°C for 1 hour in air atmosphere. The film thickness was found to be increased with the increase in withdrawal speed. The evolution of the anatase phase of TiOs2 has been confirmed by structural studies. Optical characteristics of the dip coated TiO2 films were investigated by Raman spectroscopy. For electrical measurement Al/TiO2/Si MOS structures were fabricated. The current-voltage characteristics have shown the rapid rise in leakage current for initial bias voltage and afterwards, it became quasi saturated. The film, deposited at the withdrawal speed of 1 cm/min, has shown higher leakage current.